Samsung Develops 8-Layer HBM4E for Nvidia
On August 31, according to South Korean media reports, Samsung Electronics is developing 8-layer seventh-generation High Bandwidth Memory (HBM4E) in line with Nvidia's (NVDA.O) requirements, significantly reducing stack…
On August 31, according to South Korean media reports, Samsung Electronics is developing 8-layer seventh-generation High Bandwidth Memory (HBM4E) in line with Nvidia's (NVDA.O) requirements, significantly reducing stack height compared to the originally planned 12-layer and 16-layer configurations. Nvidia has specified a speed of 17-18Gbps, approximately 20% higher than Samsung's initial HBM4E sample speed of 14.4Gbps. The product is reportedly intended for use in NVHBM.
[TechFlow]
Original: https://www.techflowpost.com/newsletter/detail_134205.html
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