NetEase-incubated Qianhe Yibang's World's First 4-Layer 3D DRAM Stacked Compute-in-Memory Chip Successfully Lights Up

On August 21, 3D compute-in-memory chip company Qianhe Yibang announced that its self-developed world's first 4-layer 3D DRAM stacked compute-in-memory chip has successfully returned from fabrication and lit up, marking the technology's transition from validation to engineering implementation.

The chip adopts a three-dimensional integrated native computing architecture, with data access bandwidth improved by an order of magnitude over traditional solutions, while access power consumption, latency, and per-operation data processing costs all decreased by an order of magnitude. Founded in January 2024 and incubated by NetEase, Qianhe Yibang recently completed a Series B funding round exceeding 2 billion yuan.

[TechFlow]